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this is information on a product in full production. november 2012 doc id 18424 rev 2 1/16 16 stf6n65k3, stfi6n65k3, STU6N65K3 n-channel 650 v, 1.1 typ., 5.4 a supermesh3? power mosfet in to-220fp, i2pakfp, ipak datasheet ? production data features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected applications switching applications description these supermesh3? power mosfets are the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. these devices boast an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max. i d ptot stf6n65k3 650 v < 1.3 5.4 a 30 w stfi6n65k3 STU6N65K3 110 w 1 2 3 1 2 3 3 2 1 to-220fp i2pakfp ipak ta b d(2,tab) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging stf6n65k3 6n65k3 to-220fp tu b e stfi6n65k3 i2pakfp STU6N65K3 ipak www.st.com
contents stf6n65k3, stfi6n65k3, STU6N65K3 2/16 doc id 18424 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
stf6n65k3, stfi6n65k3, STU6N65K3 electrical ratings doc id 18424 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220fp i2pakfp ipak v ds drain-source voltage 650 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 5.4 (1) 1. limited by package 5.4 a i d drain current (continuous) at t c = 100 c 3 (1) 3a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 21.6 (1) 21.6 a p tot total dissipation at t c = 25 c 30 110 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 5.4 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 100 mj esd gate-source human body model (c = 100 pf, r = 1.5 k ) 2.5 kv dv/dt (3) 3. i sd 5.4 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 12 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t = 1 s; t c = 25 c) 2500 v t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220fp i2pakfp ipak r thj-case thermal resistance junction-case max 4.17 1.14 c/w r thj-amb thermal resistance junction-ambient max 62.5 100 c/w
electrical characteristics stf6n65k3, stfi6n65k3, STU6N65K3 4/16 doc id 18424 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 0.8 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 9 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on-resistance v gs = 10 v, i d = 2.7 a 1.1 1.3 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 50 v, f = 1 mhz, v gs = 0 - 880 65 12 - pf pf pf c o(tr) (1) 1. c oss eq . time related is defined as a constant equivalent capacitance giving the sa me charging time as c oss when v ds increases from 0 to 80% v dss eq. capacitance time related v gs = 0, v ds = 0 to 520 v -43-pf c o(er) (2) 2. c oss eq . energy related is defined as a constant equiva lent capacitance giving t he same stored energy as c oss when v d s increases from 0 to 80% v dss eq. capacitance energy related -27-pf r g intrinsic gate resistance f = 1 mhz open drain - 3.5 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 500 v, i d = 5.4 a, v gs = 10 v (see figure 18 ) - 33 4 21 - nc nc nc
stf6n65k3, stfi6n65k3, STU6N65K3 electrical characteristics doc id 18424 rev 2 5/16 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 325 v, i d = 2.7 a, r g = 4.7 , v gs = 10 v (see figure 17 ) - 14 10 44 24 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 5.4 21.6 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 5.4 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5.4 a, di/dt = 100 a/s v dd = 60 v (see figure 22 ) - 285 5100 14 ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 5.4 a, di/dt = 100 a/s v dd = 60 v, t j = 150 c (see figure 22 ) - 330 2500 15.5 ns nc a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit v (br)gso gate-source breakdown voltage igs= 1 ma, i d =0 (open drain) 30 - v
electrical characteristics stf6n65k3, stfi6n65k3, STU6N65K3 6/16 doc id 18424 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220fp and i2pakfp figure 3. thermal impedance for to-220fp and i2pakfp figure 4. safe operating area for ipak figure 5. thermal impedance for ipak figure 6. output characteristics figure 7. transfer characteristics i d 1 0.1 0.01 0.001 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 10 am12960v1 i d 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e 10 am12961v1 i d 6 4 2 0 0 20 v d s (v) (a) 10 8 10 6v v g s =10v 12 am12962v1 i d 2 0 0 4 v g s (v) (a) 2 6 4 v d s =15v 6 8 8 10 am1296 3 v1
stf6n65k3, stfi6n65k3, STU6N65K3 electrical characteristics doc id 18424 rev 2 7/16 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 q g (nc) (v) 3 0 8 10 20 10 v dd =500v i d =5.4a 12 3 00 200 100 0 400 500 v d s v d s (v) am12964v1 r d s (on) 1.05 1.00 0.95 0.90 0 2 i d (a) ( ) 1 3 1.10 1.15 1.20 1.25 4 5 1. 3 0 1. 3 5 v g s =10v am12965v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am12966v1 e o ss 3 2 1 0 0 100 v d s (v) ( j) 400 4 200 3 00 5 500 am12967v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -75 t j (c) (norm) -25 1.10 75 25 125 v d s =v g s i d =50 a am1296 8 v1 r d s (on) 2.0 1.5 1.0 0.5 -75 t j (c) (norm) -25 75 25 125 2.5 0 am12969v1 v g s =10v i d =2.7a
electrical characteristics stf6n65k3, stfi6n65k3, STU6N65K3 8/16 doc id 18424 rev 2 figure 14. normalized bv dss vs temperature figure 15. source-drain diode forward characteristics figure 16. maximum avalanche energy vs temperature bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 am12970v1 i d =1ma v s d 0 2 i s d (a) (v) 1 5 3 4 0 0.2 0.4 0.6 0. 8 1.0 t j =-50c t j =150c t j =25c 6 am12971v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 20 40 60 8 0 100 i d =5.4 a v dd =50 v 120 am12972v1
stf6n65k3, stfi6n65k3, STU6N65K3 test circuits doc id 18424 rev 2 9/16 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data stf6n65k3, stfi6n65k3, STU6N65K3 10/16 doc id 18424 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
stf6n65k3, stfi6n65k3, STU6N65K3 package mechanical data doc id 18424 rev 2 11/16 figure 23. to-220fp drawing 7012510_rev_k_b
package mechanical data stf6n65k3, stfi6n65k3, STU6N65K3 12/16 doc id 18424 rev 2 figure 24. i 2 pakfp (to-281) drawing table 10. i 2 pakfp (to-281) mechanical data dim. mm min. typ. max. a4.40 - 4.60 b2.50 2.70 d2.50 2.75 d1 0.65 0.85 e0.45 0.70 f0.75 1.00 f1 1.20 g4.95 5.20 h 10.00 10.40 l1 21.00 23.00 l2 13.20 14.10 l3 10.55 10.85 l4 2.70 3.20 l5 0.85 1.25 l6 7.30 7.50 rev!
stf6n65k3, stfi6n65k3, STU6N65K3 package mechanical data doc id 18424 rev 2 13/16 table 11. ipak (to-251) mechanical data dim. mm. min. typ max. a 2.20 2.40 a1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 b5 0.3 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 e 6.40 6.60 e2.28 e1 4.40 4.60 h16.10 l 9.00 9.40 l1 0.80 1.20 l2 0.80 1.00 v1 10 o
package mechanical data stf6n65k3, stfi6n65k3, STU6N65K3 14/16 doc id 18424 rev 2 figure 25. ipak (to-251) drawing 006 8 771_j
stf6n65k3, stfi6n65k3, STU6N65K3 revision history doc id 18424 rev 2 15/16 5 revision history table 12. document revision history date revision changes 05-apr-2011 1 first release 07-nov-2012 2 added new part numbers: stfi6n65k3 in i2pakfp package and STU6N65K3 in ipak packages. section 2.1: electrical characteristics (curves) has been updated. minor text changes.
stf6n65k3, stfi6n65k3, STU6N65K3 16/16 doc id 18424 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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